A wideband cryogenic microwave low-noise amplifier

• Boris I. Ivanov,
• Dmitri I. Volkhin,
• Ilya L. Novikov,
• Dmitri K. Pitsun,
• Dmitri O. Moskalev,
• Ilya A. Rodionov,
• Evgeni Il’ichev and
• Aleksey G. Vostretsov

Beilstein J. Nanotechnol. 2020, 11, 1484–1491, doi:10.3762/bjnano.11.131

• -electron-mobility transistor (HEMT); HEMT amplifier; microwave cryogenic amplifier; microwave superconducting circuit readout; superconducting qubit readout; Introduction Quantum microwave devices are widely used for different applications ranging from radio astronomy [1][2][3] to quantum information

Cryogenic low-noise amplifiers for measurements with superconducting detectors

• Ilya L. Novikov,
• Boris I. Ivanov,
• Dmitri V. Ponomarev and
• Aleksey G. Vostretsov

Beilstein J. Nanotechnol. 2020, 11, 1316–1320, doi:10.3762/bjnano.11.115

• range from DC to 17 kHz. We experimentally show that the parallel differential circuit design allows for a reduction of the voltage noise from 0.55 to 0.33 nV/Hz0.5 at 77 K. Keywords: cryogenic amplifier; cryogenic low-noise amplifier; differential cryogenic amplifier; superconducting circuit readout

• are widely used for superconducting circuit readout at a temperature of 4 K [4][5][6][7][8][9][10]. However, the operating frequency range of such amplifiers starts at 10 kHz or higher. This specific design of cryogenic amplifiers is mainly based on two technological concepts, i.e., high electron